BFR843EL3E6327XTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 2.6V TSLP-3-10
$0.33
Available to order
Reference Price (USD)
15,000+
$0.19764
Exquisite packaging
Discount
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Upgrade your RF designs with Infineon Technologies's BFR843EL3E6327XTSA1 Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how BFR843EL3E6327XTSA1 can enhance your projects!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 2.6V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: 25.5dB
- Power - Max: 125mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 55mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-XFDFN
- Supplier Device Package: PG-TSLP-3-10
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