MT4S300U(TE85L,O,F
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
X34 PB-F RADIO-FREQUENCY SIGE HE
$0.68
Available to order
Reference Price (USD)
1+
$0.68000
500+
$0.6732
1000+
$0.6664
1500+
$0.6596
2000+
$0.6528
2500+
$0.646
Exquisite packaging
Discount
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Achieve peak RF performance with MT4S300U(TE85L,O,F transistors by Toshiba Semiconductor and Storage. These BJT components combine high breakdown voltage with superior thermal management, catering to power amplifier stages and frequency multipliers. Trusted in defense and commercial sectors alike. Take the next step inquire about customization options and lead times!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 4V
- Frequency - Transition: 26.5GHz
- Noise Figure (dB Typ @ f): 0.55dB @ 2GHz
- Gain: 16.9dB
- Power - Max: 250mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 3V
- Current - Collector (Ic) (Max): 50mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: USQ
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