BFS 483 E6327
Infineon Technologies
Infineon Technologies
RF TRANS 2 NPN 12V 8GHZ SOT363-6
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Designed for the future, Infineon Technologies's BFS 483 E6327 RF BJT transistors deliver cutting-edge technology in a proven package. Features include gold metallization for reliable contacts and TO-39 enclosures for durability. Perfect for phased-array antennas and microwave links. Your innovation starts here reach out for expert consultation today!
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
- Gain: 19dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
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