BFS17WE6327HTSA1
Infineon Technologies
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT323-3
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Upgrade your RF designs with Infineon Technologies's BFS17WE6327HTSA1 Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how BFS17WE6327HTSA1 can enhance your projects!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 1.4GHz
- Noise Figure (dB Typ @ f): 3.5dB ~ 5dB @ 800MHz
- Gain: -
- Power - Max: 280mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2mA, 1V
- Current - Collector (Ic) (Max): 25mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323
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