BFS483H6327XTSA1
Infineon Technologies
Infineon Technologies
RF TRANS 2 NPN 12V 8GHZ SOT363-6
$0.83
Available to order
Reference Price (USD)
3,000+
$0.28306
6,000+
$0.26580
15,000+
$0.25717
30,000+
$0.24854
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover high-performance BFS483H6327XTSA1 RF Bipolar Transistors from Infineon Technologies, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 8GHz
- Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
- Gain: 19dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
- Current - Collector (Ic) (Max): 65mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-VSSOP, SC-88, SOT-363
- Supplier Device Package: PG-SOT363-PO
Related Products
Infineon Technologies
BFP840ESDH6327XTSA1
Toshiba Semiconductor and Storage
MT3S111P(TE12L,F)
Toshiba Semiconductor and Storage
2SC5108-Y,LF
Analog Devices Inc./Maxim Integrated
MAX2601ESA+
Infineon Technologies
BFR93AWH6327XTSA1
Fairchild Semiconductor
KSC1393YBU
Fairchild Semiconductor
KSC1730YTA
NXP USA Inc.
BFG310W/XR,115
NTE Electronics, Inc
NTE486
MACOM Technology Solutions