BFU730F,115
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 2.8V 55GHZ 4DFP
$0.69
Available to order
Reference Price (USD)
3,000+
$0.15266
6,000+
$0.14281
15,000+
$0.13296
30,000+
$0.13132
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Achieve peak RF performance with BFU730F,115 transistors by NXP USA Inc.. These BJT components combine high breakdown voltage with superior thermal management, catering to power amplifier stages and frequency multipliers. Trusted in defense and commercial sectors alike. Take the next step inquire about customization options and lead times!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 2.8V
- Frequency - Transition: 55GHz
- Noise Figure (dB Typ @ f): 0.8dB ~ 1.3dB @ 5.8GHz ~ 12GHz
- Gain: -
- Power - Max: 197mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 205 @ 2mA, 2V
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343F
- Supplier Device Package: 4-DFP
Related Products
onsemi
15GN03FA-TL-H
Harris Corporation
HFA3127B96-HC
Infineon Technologies
BFP740E6327
NTE Electronics, Inc
NTE278
Infineon Technologies
BFQ19SH6327XTSA1
Toshiba Semiconductor and Storage
2SC4215-Y(TE85L,F)
MACOM Technology Solutions
MRF16006
Infineon Technologies
BFR360FH6327XTSA1
Infineon Technologies
BFP520FH6327XTSA1
Renesas Electronics America Inc