BGB 540 E6327
Infineon Technologies
Infineon Technologies
RF TRANS NPN 3.5V SOT343-4
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Discover high-performance BGB 540 E6327 RF Bipolar Transistors from Infineon Technologies, designed for superior signal amplification in demanding applications. These transistors feature excellent high-frequency response, low noise, and reliable performance, making them ideal for RF and microwave circuits. Commonly used in communication systems, radar, and wireless devices, our BJT-RF transistors ensure stable operation under varying conditions. Contact us today for pricing and availability let our experts help you find the perfect solution for your RF needs!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 3.5V
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): 1.3dB ~ 2dB @ 900MHz ~ 1.8GHz
- Gain: 16dB ~ 17.5dB
- Power - Max: 120mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): 30mA
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-82A, SOT-343
- Supplier Device Package: PG-SOT343-3D
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