BFG520W/X,115
NXP USA Inc.
NXP USA Inc.
RF TRANS NPN 15V 9GHZ 4SO
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Designed for the future, NXP USA Inc.'s BFG520W/X,115 RF BJT transistors deliver cutting-edge technology in a proven package. Features include gold metallization for reliable contacts and TO-39 enclosures for durability. Perfect for phased-array antennas and microwave links. Your innovation starts here reach out for expert consultation today!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 15V
- Frequency - Transition: 9GHz
- Noise Figure (dB Typ @ f): 1.1dB ~ 2.1dB @ 900MHz
- Gain: -
- Power - Max: 500mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 6V
- Current - Collector (Ic) (Max): 70mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-343 Reverse Pinning
- Supplier Device Package: 4-SO
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