BLA6G1011LS-200RG11
NXP USA Inc.
NXP USA Inc.
POWER LDMOS TRANSISTOR, SOT502 (
$355.49
Available to order
Reference Price (USD)
1+
$355.49000
500+
$351.9351
1000+
$348.3802
1500+
$344.8253
2000+
$341.2704
2500+
$337.7155
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Trust BLA6G1011LS-200RG11 by NXP USA Inc. for all your transistor needs in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single are built to last, with features like high breakdown voltage and excellent thermal performance. Perfect for automotive, industrial, and consumer electronics, BLA6G1011LS-200RG11 ensures reliability. Get in touch today to request a quote and see why NXP USA Inc. is a trusted name in the industry.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Microchip Technology
JANTX2N6338
NXP USA Inc.
BC856B/DG/B3235
NTE Electronics, Inc
2N4399
NXP USA Inc.
PDTD143XQA147
Diodes Incorporated
FZT957TA
NXP USA Inc.
PHPT60610NY115
NTE Electronics, Inc
2N6109
NTE Electronics, Inc
2N5684
onsemi
MJE15033G
onsemi