BLF6G10LS-135RN112
NXP USA Inc.
NXP USA Inc.
POWER LDMOS TRANSISTOR, SOT502 (
$70.31
Available to order
Reference Price (USD)
1+
$70.31000
500+
$69.6069
1000+
$68.9038
1500+
$68.2007
2000+
$67.4976
2500+
$66.7945
Exquisite packaging
Discount
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Optimize your designs with BLF6G10LS-135RN112 by NXP USA Inc., a leader in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single are designed for precision and reliability, offering excellent linearity and low distortion. Whether for RF applications or general-purpose switching, BLF6G10LS-135RN112 is the perfect fit. Contact us today to learn more and place your order with NXP USA Inc..
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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