BLF6G10LS-160RN112
NXP USA Inc.
NXP USA Inc.
RF POWER TRANSISTORS
$81.82
Available to order
Reference Price (USD)
1+
$81.82000
500+
$81.0018
1000+
$80.1836
1500+
$79.3654
2000+
$78.5472
2500+
$77.729
Exquisite packaging
Discount
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Upgrade your RF designs with NXP USA Inc.'s BLF6G10LS-160RN112 Bipolar Junction Transistors (BJT), engineered for precision and efficiency in high-frequency applications. Key features include high gain, fast switching, and thermal stability, suitable for amplifiers, oscillators, and RF modules. Whether for industrial or consumer electronics, these transistors deliver consistent performance. Interested? Submit an inquiry now to learn how BLF6G10LS-160RN112 can enhance your projects!
Specifications
- Product Status: Active
- Transistor Type: -
- Voltage - Collector Emitter Breakdown (Max): -
- Frequency - Transition: -
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Current - Collector (Ic) (Max): -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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