BLS3135-65I
Ampleon USA Inc.
Ampleon USA Inc.
MICROWAVE POWER TRANSISTOR (AMPL
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Ampleon USA Inc. presents BLS3135-65I: The go-to RF BJT transistor for low-power, high-frequency designs. Its standout features like controlled beta variation and hermetic packaging make it a favorite among telecom engineers. From RFID readers to test equipment, versatility meets precision. Get started request samples or datasheets via our quick-response form!
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 75V
- Frequency - Transition: 3.5GHz
- Noise Figure (dB Typ @ f): -
- Gain: 7dB
- Power - Max: 200W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 2A, 5V
- Current - Collector (Ic) (Max): 8A
- Operating Temperature: 200°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-422A
- Supplier Device Package: SOT422A
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