BSB280N15NZ3GXUMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 9A/30A 2WDSON
$1.99
Available to order
Reference Price (USD)
5,000+
$1.12398
Exquisite packaging
Discount
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Experience the power of BSB280N15NZ3GXUMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, BSB280N15NZ3GXUMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 4V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MG-WDSON-2, CanPAK M™
- Package / Case: 3-WDSON
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