BSC004NE2LS5ATMA1
Infineon Technologies
Infineon Technologies
TRENCH <= 40V
$3.02
Available to order
Reference Price (USD)
1+
$3.02000
500+
$2.9898
1000+
$2.9596
1500+
$2.9294
2000+
$2.8992
2500+
$2.869
Exquisite packaging
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Discover BSC004NE2LS5ATMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 479A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 10V
- Vgs(th) (Max) @ Id: 2V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 238 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 12.5 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 188W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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