TSM60NB380CF C0G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
MOSFET N-CH 600V 11A ITO220S
$2.71
Available to order
Reference Price (USD)
1+
$1.86000
10+
$1.67900
100+
$1.34930
500+
$1.04948
1,000+
$0.86957
3,000+
$0.83958
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of TSM60NB380CF C0G, a premium Transistors - FETs, MOSFETs - Single from Taiwan Semiconductor Corporation. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, TSM60NB380CF C0G is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 380mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 62.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ITO-220S
- Package / Case: TO-220-3 Full Pack
Related Products
Infineon Technologies
BSZ068N06NSATMA1
Vishay Siliconix
SIHF7N60E-E3
Texas Instruments
CSD17302Q5A
onsemi
NVMFS5C423NLAFT3G
STMicroelectronics
STE70NM60
IXYS
IXTP90N055T2
Infineon Technologies
IRFU3607PBF
STMicroelectronics
STD5N60DM2
STMicroelectronics
STD45NF75T4
Infineon Technologies