BSC014N04LSATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 32/100A SUPERSO8
$2.04
Available to order
Reference Price (USD)
5,000+
$0.95175
10,000+
$0.93413
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of BSC014N04LSATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, BSC014N04LSATMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSO8
- Package / Case: 8-PowerTDFN
Related Products
Infineon Technologies
IPB80N04S403ATMA1
IXYS
IXTA3N150HV
Diodes Incorporated
DMN6069SE-13
STMicroelectronics
STD5NK40Z-1
Nexperia USA Inc.
BUK9Y15-100E,115
Infineon Technologies
IRFH5010TRPBF
STMicroelectronics
STFU10NK60Z
Infineon Technologies
IRLHS6242TRPBF
STMicroelectronics
STFW3N170
Harris Corporation