BSC019N04NSGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 30A/100A TDSON
$1.90
Available to order
Reference Price (USD)
5,000+
$0.70269
10,000+
$0.67931
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover BSC019N04NSGATMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 85µA
- Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
Related Products
Micro Commercial Co
MCQ12N10Y-TP
Taiwan Semiconductor Corporation
TSM240N03CX RFG
onsemi
NTLJS2103PTAG
onsemi
FDBL9406L-F085
Vishay Siliconix
SQD40N10-25_GE3
STMicroelectronics
STB46N60M6
onsemi
FDFMA2N028Z
Vishay Siliconix
SQD10N30-330H_4GE3
Vishay Siliconix
IRFP460BPBF
Texas Instruments