BSC028N06LS3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 60V 23A/100A TDSON
$3.45
Available to order
Reference Price (USD)
5,000+
$1.38008
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover BSC028N06LS3GATMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2.8mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 93µA
- Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 139W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-1
- Package / Case: 8-PowerTDFN
Related Products
Diodes Incorporated
DMN2990UFO-7B
Nexperia USA Inc.
PMV50EPEAR
onsemi
NTD4909N-1G
Panjit International Inc.
PJD10N10_L2_00001
Infineon Technologies
IPD18DP10LMATMA1
Diodes Incorporated
DMN24H11DSQ-7
Central Semiconductor Corp
CDM7-650 TR13 PBFREE
Vishay Siliconix
SIHA22N60E-E3
onsemi
NTMFS5C442NT3G
Alpha & Omega Semiconductor Inc.