BSC037N08NS5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 100A TDSON
$3.41
Available to order
Reference Price (USD)
5,000+
$1.13585
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with BSC037N08NS5ATMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, BSC037N08NS5ATMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 72µA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4200 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 114W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-7
- Package / Case: 8-PowerTDFN
Related Products
Microchip Technology
VN2450N8-G
onsemi
NVMFS3D6N10MCLT1G
Fairchild Semiconductor
FCI7N60
IXYS
IXFH26N60P
IXYS
IXTP56N15T
Infineon Technologies
AUIRF7669L2TR
Goford Semiconductor
GC11N65M
Taiwan Semiconductor Corporation
TSM650P02CX RFG
Infineon Technologies
IPD60R360P7SAUMA1
Vishay Siliconix