BSC040N08NS5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 100A TDSON
$2.42
Available to order
Reference Price (USD)
5,000+
$0.92950
10,000+
$0.91000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BSC040N08NS5ATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BSC040N08NS5ATMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 67µA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-7
- Package / Case: 8-PowerTDFN
Related Products
onsemi
FDD6637
Transphorm
TPH3206PS
Infineon Technologies
BSC0403NSATMA1
Infineon Technologies
IPS075N03LGAKMA1
GeneSiC Semiconductor
G3R20MT12N
Diodes Incorporated
DMN2056U-13
Alpha & Omega Semiconductor Inc.
AOL1404G
Nexperia USA Inc.
BUK6D81-80EX
Infineon Technologies
IRFB260NPBF
onsemi