BSC054N04NSGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 17A/81A TDSON
$1.14
Available to order
Reference Price (USD)
5,000+
$0.38525
10,000+
$0.37260
25,000+
$0.36570
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose BSC054N04NSGATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with BSC054N04NSGATMA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 81A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4V @ 27µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-5
- Package / Case: 8-PowerTDFN
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