BSC070N10LS5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 14A/79A TDSON
$3.11
Available to order
Reference Price (USD)
1+
$3.11000
500+
$3.0789
1000+
$3.0478
1500+
$3.0167
2000+
$2.9856
2500+
$2.9545
Exquisite packaging
Discount
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Experience the power of BSC070N10LS5ATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, BSC070N10LS5ATMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 79A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 49µA
- Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-7
- Package / Case: 8-PowerTDFN
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