STW42N60M2-EP
STMicroelectronics
STMicroelectronics
MOSFET N-CH 600V 34A TO247
$9.16
Available to order
Reference Price (USD)
1+
$11.17000
30+
$9.29100
120+
$8.45500
510+
$7.20100
1,020+
$6.36500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with STW42N60M2-EP, a premium Transistors - FETs, MOSFETs - Single from STMicroelectronics. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust STW42N60M2-EP for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 87mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id: 4.75V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 250W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
Diodes Incorporated
DMT43M8LFV-13
Vishay Siliconix
SQ4483BEEY-T1_GE3
Nexperia USA Inc.
PMPB07R0UNX
Vishay Siliconix
SIR880ADP-T1-GE3
IXYS
IXFH42N60P3
Vishay Siliconix
SIHG25N50E-GE3
Fairchild Semiconductor
FCPF380N65FL1
onsemi
FCP220N80
Infineon Technologies
IQE030N06NM5ATMA1
STMicroelectronics