BSC093N15NS5ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
$4.47
Available to order
Reference Price (USD)
5,000+
$1.62793
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover BSC093N15NS5ATMA1, a versatile Transistors - FETs, MOSFETs - Single solution from Infineon Technologies, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 9.3mOhm @ 44A, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 107µA
- Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 139W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8-7
- Package / Case: 8-PowerTDFN
Related Products
Diodes Incorporated
2N7002A-7
Infineon Technologies
IPW65R145CFD7AXKSA1
Microchip Technology
APT10078SLLG
STMicroelectronics
STF7N60DM2
Rohm Semiconductor
QS5U16TR
NXP USA Inc.
BUK652R7-30C,127
IXYS
IXFR24N100
Infineon Technologies
IPD60R600E6ATMA1
Nexperia USA Inc.
BUK7Y41-80EX
Infineon Technologies