BSG0813NDIATMA1
Infineon Technologies
Infineon Technologies
MOSFET 2N-CH 25V 19A/33A TISON8
$1.80
Available to order
Reference Price (USD)
5,000+
$1.01930
Exquisite packaging
Discount
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Discover high-performance BSG0813NDIATMA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are designed for efficiency and reliability, making them ideal for various electronic applications. Features include low power consumption, high switching speed, and excellent thermal stability. Perfect for power management, amplification, and switching circuits. Contact us today for a quote and let Infineon Technologies s BSG0813NDIATMA1 enhance your projects with superior quality and performance.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Asymmetrical
- FET Feature: Logic Level Gate, 4.5V Drive
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 19A, 33A
- Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 12V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 155°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PG-TISON-8
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