BSH105,215
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 20V 1.05A TO236AB
$0.38
Available to order
Reference Price (USD)
3,000+
$0.11150
6,000+
$0.10600
15,000+
$0.09775
30,000+
$0.09225
75,000+
$0.08400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Nexperia USA Inc. presents BSH105,215, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, BSH105,215 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.05A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 200mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 570mV @ 1mA (Typ)
- Gate Charge (Qg) (Max) @ Vgs: 3.9 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 152 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 417mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Microchip Technology
APT40N60JCU2
onsemi
FQP27N25
Vishay Siliconix
SUD19P06-60-E3
Vishay Siliconix
SI3437DV-T1-GE3
Infineon Technologies
IPW65R035CFD7AXKSA1
Microchip Technology
APT37F50B
onsemi
FCPF850N80Z
NXP USA Inc.
NX3008PBKMB,315
onsemi
NTMS3P03R2
Vishay Siliconix