NX3008PBKMB,315
NXP USA Inc.
NXP USA Inc.
MOSFET P-CH 30V 300MA DFN1006B-3
$0.03
Available to order
Reference Price (USD)
10,000+
$0.04488
Exquisite packaging
Discount
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Optimize your electronic systems with NX3008PBKMB,315, a high-quality Transistors - FETs, MOSFETs - Single from NXP USA Inc.. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, NX3008PBKMB,315 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 4.1Ohm @ 200mA, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.72 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 46 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 360mW (Ta), 2.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1006B-3
- Package / Case: SC-101, SOT-883
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