BSM10GD120DN2E3224BOSA1
Infineon Technologies
Infineon Technologies
IGBT MODULE 1200V 15A 80W
$79.30
Available to order
Reference Price (USD)
10+
$54.20000
Exquisite packaging
Discount
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The BSM10GD120DN2E3224BOSA1 IGBT Module from Infineon Technologies delivers superior performance for demanding power control tasks. With features such as short-circuit protection and high-frequency operation, it's suited for solar inverters, industrial automation, and more. Trust Infineon Technologies for cutting-edge Discrete Semiconductor Products. Request a sample now!
Specifications
- Product Status: Last Time Buy
- IGBT Type: -
- Configuration: Full Bridge
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 15 A
- Power - Max: 80 W
- Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 10A
- Current - Collector Cutoff (Max): 400 µA
- Input Capacitance (Cies) @ Vce: 530 pF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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