BSM180C12P2E202
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 1200V 204A MODULE
$720.00
Available to order
Reference Price (USD)
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$560.00000
Exquisite packaging
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BSM180C12P2E202 by Rohm Semiconductor is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BSM180C12P2E202 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 35.2mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): +22V, -6V
- Input Capacitance (Ciss) (Max) @ Vds: 20000 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1360W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: Module
- Package / Case: Module
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