BSM180D12P2E002
Rohm Semiconductor
Rohm Semiconductor
1200V, 204A, HALF BRIDGE, SILICO
$811.80
Available to order
Reference Price (USD)
1+
$811.80000
500+
$803.682
1000+
$795.564
1500+
$787.446
2000+
$779.328
2500+
$771.21
Exquisite packaging
Discount
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Enhance your electronic applications with Rohm Semiconductor s BSM180D12P2E002, a leading product in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are known for their high-speed performance, low energy consumption, and robust design. Perfect for use in switching regulators, audio systems, and communication devices. Discover the benefits of BSM180D12P2E002 today get in touch with us for a detailed quote and technical support.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 204A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 4V @ 35.2mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 10V
- Power - Max: 1360W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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