BSM180D12P3C007
Rohm Semiconductor
Rohm Semiconductor
SIC POWER MODULE
$675.92
Available to order
Reference Price (USD)
1+
$525.71000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your project s performance with Rohm Semiconductor s BSM180D12P3C007, a standout in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components offer superior features such as high efficiency, low noise, and extended lifespan, making them suitable for a variety of advanced applications. From IoT devices to energy-efficient systems, BSM180D12P3C007 provides the reliability you need. Don t wait reach out to us today for more information and to request a sample of BSM180D12P3C007.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 50mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
- Power - Max: 880W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Micro Commercial Co
SIL3724A-TP
Toshiba Semiconductor and Storage
SSM6N36FE,LM
Infineon Technologies
IRF7501TRPBF
Diodes Incorporated
HTMN5130SSD-13
Fairchild Semiconductor
HUF75637S3
Sanken
SLA5065
Advanced Linear Devices Inc.
ALD212900ASAL
onsemi
FDMC8200S
onsemi
FDMD8560L
Infineon Technologies