BSM300D12P3E005
Rohm Semiconductor
Rohm Semiconductor
SILICON CARBIDE POWER MODULE. B
$1,645.72
Available to order
Reference Price (USD)
1+
$1645.72000
500+
$1629.2628
1000+
$1612.8056
1500+
$1596.3484
2000+
$1579.8912
2500+
$1563.434
Exquisite packaging
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Optimize your electronic circuits with Rohm Semiconductor s BSM300D12P3E005, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how BSM300D12P3E005 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 91mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 10V
- Power - Max: 1260W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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