BSM600D12P3G001
Rohm Semiconductor
Rohm Semiconductor
1200V, 576A, HALF BRIDGE, FULL S
$2,142.00
Available to order
Reference Price (USD)
1+
$2142.00000
500+
$2120.58
1000+
$2099.16
1500+
$2077.74
2000+
$2056.32
2500+
$2034.9
Exquisite packaging
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Experience the next level of semiconductor technology with Rohm Semiconductor s BSM600D12P3G001, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for BSM600D12P3G001.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 600A (Tc)
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: 5.6V @ 182mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: 31000pF @ 10V
- Power - Max: 2450W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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