BSO051N03MS G
Infineon Technologies
Infineon Technologies
MOSFET N-CH 30V 14A 8DSO
$0.65
Available to order
Reference Price (USD)
1+
$0.65000
500+
$0.6435
1000+
$0.637
1500+
$0.6305
2000+
$0.624
2500+
$0.6175
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents BSO051N03MS G, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, BSO051N03MS G delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.1mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-DSO-8
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
onsemi
NDS356AP
Vishay Siliconix
SQJA72EP-T1_GE3
Yangzhou Yangjie Electronic Technology Co.,Ltd
YJG15N15B-F1-0100HF
Nexperia USA Inc.
BUK764R4-60E,118
Sanyo
MCH6424-TL-E
Toshiba Semiconductor and Storage
TK10A55D(STA4,Q,M)
Toshiba Semiconductor and Storage
TK14G65W5,RQ
Infineon Technologies
SN7002WH6327XTSA1
STMicroelectronics
STU13N60M2
Toshiba Semiconductor and Storage