BSO211PNTMA1
Infineon Technologies
Infineon Technologies
MOSFET 2P-CH 20V 4.7A 8PDSO
$0.86
Available to order
Reference Price (USD)
1+
$0.86000
500+
$0.8514
1000+
$0.8428
1500+
$0.8342
2000+
$0.8256
2500+
$0.817
Exquisite packaging
Discount
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The BSO211PNTMA1 by Infineon Technologies is a must-have in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Designed for high-performance applications, these components feature low RDS(on), high power density, and excellent reliability. They are widely used in automotive, aerospace, and industrial electronics. Let Infineon Technologies s BSO211PNTMA1 be the backbone of your next project contact us for more information and to place your order.
Specifications
- Product Status: Obsolete
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 4.7A
- Rds On (Max) @ Id, Vgs: 67mOhm @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs: 23.9nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 920pF @ 15V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8
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