SIS903DN-T1-GE3
Vishay Siliconix

Vishay Siliconix
MOSFET DUAL P-CHAN POWERPAK 1212
$1.03
Available to order
Reference Price (USD)
3,000+
$0.46494
6,000+
$0.44311
15,000+
$0.42752
Exquisite packaging
Discount
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Upgrade your electronic designs with Vishay Siliconix s SIS903DN-T1-GE3, a top-tier choice in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. Known for their durability and high efficiency, these components are essential for modern electronics. Key features include robust construction, low on-resistance, and fast switching capabilities. Ideal for use in power supplies, motor control, and audio amplifiers. Reach out to us now to learn more about how SIS903DN-T1-GE3 can meet your specific needs and boost your application performance.
Specifications
- Product Status: Active
- FET Type: 2 P-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Rds On (Max) @ Id, Vgs: 20.1mOhm @ 5A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 10V
- Power - Max: 2.6W (Ta), 23W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: PowerPAK® 1212-8 Dual
- Supplier Device Package: PowerPAK® 1212-8 Dual