BSP122,115
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 200V 550MA SOT223
$0.65
Available to order
Reference Price (USD)
1,000+
$0.27136
2,000+
$0.25024
5,000+
$0.23616
10,000+
$0.22208
25,000+
$0.21222
50,000+
$0.21120
Exquisite packaging
Discount
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Boost your electronic applications with BSP122,115, a reliable Transistors - FETs, MOSFETs - Single by Nexperia USA Inc.. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, BSP122,115 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 550mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.4V, 10V
- Rds On (Max) @ Id, Vgs: 2.5Ohm @ 750mA, 10V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-223
- Package / Case: TO-261-4, TO-261AA
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