BSS126H6327XTSA2
Infineon Technologies
Infineon Technologies
MOSFET N-CH 600V 21MA SOT23-3
$0.61
Available to order
Reference Price (USD)
3,000+
$0.17301
6,000+
$0.16297
15,000+
$0.15293
30,000+
$0.14590
75,000+
$0.14517
Exquisite packaging
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Discover high-performance BSS126H6327XTSA2 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, BSS126H6327XTSA2 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 21mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
- Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V
- Vgs(th) (Max) @ Id: 1.6V @ 8µA
- Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V
- FET Feature: Depletion Mode
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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Infineon Technologies