BSS127SSN-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 600V 50MA SC59
$0.50
Available to order
Reference Price (USD)
3,000+
$0.11728
6,000+
$0.11137
15,000+
$0.10249
30,000+
$0.09657
75,000+
$0.08769
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
BSS127SSN-7 by Diodes Incorporated is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BSS127SSN-7 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 50mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.08 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 610mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Microchip Technology
APT38F80L
Infineon Technologies
AUIRF1404STRL
IXYS
IXFN360N15T2
Diodes Incorporated
DMT3009LFVWQ-7
Infineon Technologies
BSZ033NE2LS5ATMA1
Infineon Technologies
BSZ110N06NS3GATMA1
IXYS
IXFX32N80P
onsemi
NTD4813N-1G
Panjit International Inc.
PJQ4463AP-AU_R2_000A1
Infineon Technologies