BSS138P,215
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET N-CH 60V 360MA TO236AB
$0.27
Available to order
Reference Price (USD)
3,000+
$0.05004
6,000+
$0.04410
15,000+
$0.03816
30,000+
$0.03618
75,000+
$0.03420
150,000+
$0.03024
Exquisite packaging
Discount
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Nexperia USA Inc. presents BSS138P,215, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, BSS138P,215 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.6Ohm @ 300mA, 10V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 350mW (Ta), 1.14W (Tc)
- Operating Temperature: -55°C ~ 150°C (TA)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-236AB
- Package / Case: TO-236-3, SC-59, SOT-23-3
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