BSS223PWH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET P-CH 20V 390MA SOT323-3
$0.43
Available to order
Reference Price (USD)
3,000+
$0.07480
6,000+
$0.06573
15,000+
$0.05665
30,000+
$0.05363
75,000+
$0.05060
150,000+
$0.04455
Exquisite packaging
Discount
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BSS223PWH6327XTSA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BSS223PWH6327XTSA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 390mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 1.2Ohm @ 390mA, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 1.5µA
- Gate Charge (Qg) (Max) @ Vgs: 0.62 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 250mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT323
- Package / Case: SC-70, SOT-323
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