BSS806NH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 20V 2.3A SOT23-3
$0.53
Available to order
Reference Price (USD)
3,000+
$0.10308
6,000+
$0.09785
15,000+
$0.09001
30,000+
$0.08479
75,000+
$0.07695
150,000+
$0.07553
Exquisite packaging
Discount
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Enhance your circuit performance with BSS806NH6327XTSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust BSS806NH6327XTSA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
- Rds On (Max) @ Id, Vgs: 57mOhm @ 2.3A, 2.5V
- Vgs(th) (Max) @ Id: 750mV @ 11µA
- Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 2.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 529 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT23
- Package / Case: TO-236-3, SC-59, SOT-23-3
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