IPP65R190CFD7AAKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 14A TO220-3
$4.93
Available to order
Reference Price (USD)
1+
$4.93000
500+
$4.8807
1000+
$4.8314
1500+
$4.7821
2000+
$4.7328
2500+
$4.6835
Exquisite packaging
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Discover high-performance IPP65R190CFD7AAKSA1 from Infineon Technologies, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, IPP65R190CFD7AAKSA1 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 320µA
- Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 77W (Tc)
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3
- Package / Case: TO-220-3
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