BSS816NWH6327XTSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 20V 1.4A SOT323-3
$0.48
Available to order
Reference Price (USD)
3,000+
$0.07970
6,000+
$0.07003
15,000+
$0.06036
30,000+
$0.05714
75,000+
$0.05391
150,000+
$0.04747
Exquisite packaging
Discount
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Boost your electronic applications with BSS816NWH6327XTSA1, a reliable Transistors - FETs, MOSFETs - Single by Infineon Technologies. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, BSS816NWH6327XTSA1 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
- Rds On (Max) @ Id, Vgs: 160mOhm @ 1.4A, 2.5V
- Vgs(th) (Max) @ Id: 750mV @ 3.7µA
- Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 2.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT323
- Package / Case: SC-70, SOT-323
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