BSZ018N04LS6ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 27A/40A TSDSON
$2.66
Available to order
Reference Price (USD)
1+
$2.66000
500+
$2.6334
1000+
$2.6068
1500+
$2.5802
2000+
$2.5536
2500+
$2.527
Exquisite packaging
Discount
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Enhance your circuit performance with BSZ018N04LS6ATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust BSZ018N04LS6ATMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
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