IRFU5305PBF
Infineon Technologies
Infineon Technologies
MOSFET P-CH 55V 31A IPAK
$1.26
Available to order
Reference Price (USD)
1+
$1.17000
75+
$0.93947
150+
$0.82200
525+
$0.63745
1,050+
$0.50325
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IRFU5305PBF by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IRFU5305PBF inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55 V
- Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: IPAK (TO-251AA)
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Infineon Technologies
IPW65R110CFDFKSA1
Infineon Technologies
IPA65R099C6XKSA1
Vishay Siliconix
SI7806ADN-T1-E3
Diodes Incorporated
DMG3415UQ-7
onsemi
NVMFS6H858NLWFT1G
IXYS
IXTA76N25T
onsemi
STD110N02RT4G
Taiwan Semiconductor Corporation
TSM70N750CP ROG
Fairchild Semiconductor
FDS4080N7
Microchip Technology