BSZ097N04LSGATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 40V 12A/40A 8TSDSON
$1.08
Available to order
Reference Price (USD)
5,000+
$0.34155
10,000+
$0.32890
25,000+
$0.32200
Exquisite packaging
Discount
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Optimize your electronic systems with BSZ097N04LSGATMA1, a high-quality Transistors - FETs, MOSFETs - Single from Infineon Technologies. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, BSZ097N04LSGATMA1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 35W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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