BSZ15DC02KDHXTMA1
Infineon Technologies
Infineon Technologies
MOSFET N/P-CH 20V 5.1/3.2A TDSON
$1.50
Available to order
Reference Price (USD)
5,000+
$0.43890
10,000+
$0.42240
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the next level of semiconductor technology with Infineon Technologies s BSZ15DC02KDHXTMA1, part of the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are built to deliver exceptional performance with features like high current capacity, minimal power loss, and enhanced durability. Suitable for a wide array of applications including LED lighting, automotive systems, and renewable energy solutions. Get in touch with us today to request a sample or inquire about bulk pricing for BSZ15DC02KDHXTMA1.
Specifications
- Product Status: Active
- FET Type: N and P-Channel Complementary
- FET Feature: Logic Level Gate, 2.5V Drive
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 5.1A, 3.2A
- Rds On (Max) @ Id, Vgs: 55mOhm @ 5.1A, 4.5V
- Vgs(th) (Max) @ Id: 1.4V @ 110µA
- Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 419pF @ 10V
- Power - Max: 2.5W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: PG-TSDSON-8-FL
Related Products
Diodes Incorporated
DMG1026UV-7
Alpha & Omega Semiconductor Inc.
AOE6930
Nexperia USA Inc.
BUK7K5R6-30E,115
Rohm Semiconductor
UM6K34NTCN
Diodes Incorporated
DMHC4035LSD-13
Panjit International Inc.
PJQ5846-AU_R2_000A1
onsemi
EMH2409-TL-H
Panjit International Inc.
PJS6815_S1_00001
Infineon Technologies
IPP120N04S3-02
Advanced Linear Devices Inc.