BSZ340N08NS3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 6A/23A 8TSDSON
$0.94
Available to order
Reference Price (USD)
5,000+
$0.24131
10,000+
$0.23238
25,000+
$0.22750
Exquisite packaging
Discount
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Experience the power of BSZ340N08NS3GATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, BSZ340N08NS3GATMA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 23A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 34mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 12µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 32W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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