BSZ440N10NS3GATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 100V 5.3A/18A TSDSON
$1.02
Available to order
Reference Price (USD)
5,000+
$0.38594
10,000+
$0.37143
25,000+
$0.36932
Exquisite packaging
Discount
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BSZ440N10NS3GATMA1 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BSZ440N10NS3GATMA1 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 44mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 12µA
- Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 29W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8
- Package / Case: 8-PowerTDFN
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